The Local Exploration of Magnetic Field Effects in Semiconductors

This study reports on the local exploration of magnetic field effects in semiconductors, including silicon (Si), germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP) using time differential perturbed angular correlation (TDPAC) technique. TDPAC measurements were carried out under external fields with strengths 0.48 T 2.1 at room temperature, 77 K following implantation 111In (111Cd) probes. Defects caused by ion could be easily removed thermal annealing an appropriate temperature. The agreement between measured Larmor frequencies theoretical values confirms that almost no intrinsic point defects are present semiconductors. At low temperatures, electric interaction sets in. It stems from electron capture after-effect. In case silicon, this effect is well visible. associated a double charge state defect ion. No such arise GaAs InP where Cd contributes only single electronic state. correspond to also temperatures.